Measuring Value in Product Development

“What is value in product development?” is the key question of this paper. The answer is critical to the creation of lean in product development. By knowing how much value is added by product development (PD) activities, decisions can be more rationally made about how to allocate resources, such as time and money. In order to apply the principles of Lean Thinking and remove waste from the product development system, value must be precisely defined. Unfortunately, value is a complex entity that is composed of many dimensions and has thus far eluded definition on a local level. For this reason, research has been initiated on “Measuring Value in Product Development.” This paper serves as an introduction to this research. It presents the current understanding of value in PD, the critical questions involved, and a specific research design to guide the development of a methodology for measuring value. Work in PD value currently focuses on either high-level perspectives on value, or detailed looks at the attributes that value might have locally in the PD process. Models that attempt to capture value in PD are reviewed. These methods, however, do not capture the depth necessary to allow for application. A methodology is needed to evaluate activities on a local level to determine the amount of value they add and their sensitivity with respect to performance, cost, time, and risk. Two conceptual tools are proposed. The first is a conceptual framework for value creation in PD, referred to here as the Value Creation Model. The second tool is the Value-Activity Map, which shows the relationships between specific activities and value attributes. These maps will allow a better understanding of the development of value in PD, will facilitate comparison of value development between separate projects, and will provide the information necessary to adapt process analysis tools (such as DSM) to consider value. The key questions that this research entails are: · What are the primary attributes of lifecycle value within PD? · How can one model the creation of value in a specific PD process? · Can a useful methodology be developed to quantify value in PD processes? · What are the tools necessary for application? · What PD metrics will be integrated with the necessary tools? The research milestones are: · Collection of value attributes and activities (September, 200) · Development of methodology of value-activity association (October, 2000) · Testing and refinement of the methodology (January, 2001) · Tool Development (March, 2001) · Present findings at July INCOSE conference (April, 2001) · Deliver thesis that captures a formalized methodology for defining value in PD (including LEM data sheets) (June, 2001) The research design aims for the development of two primary deliverables: a methodology to guide the incorporation of value, and a product development tool that will allow direct application.

Vector-Based Integration of Local and Long-Range Information in Visual Cortex

Integration of inputs by cortical neurons provides the basis for the complex information processing performed in the cerebral cortex. Here, we propose a new analytic framework for understanding integration within cortical neuronal receptive fields. Based on the synaptic organization of cortex, we argue that neuronal integration is a systems--level process better studied in terms of local cortical circuitry than at the level of single neurons, and we present a method for constructing self-contained modules which capture (nonlinear) local circuit interactions. In this framework, receptive field elements naturally have dual (rather than the traditional unitary influence since they drive both excitatory and inhibitory cortical neurons. This vector-based analysis, in contrast to scalarsapproaches, greatly simplifies integration by permitting linear summation of inputs from both "classical" and "extraclassical" receptive field regions. We illustrate this by explaining two complex visual cortical phenomena, which are incompatible with scalar notions of neuronal integration.

Role of Low-level Mechanisms in Brightness Perception

Brightness judgments are a key part of the primate brain's visual analysis of the environment. There is general consensus that the perceived brightness of an image region is based not only on its actual luminance, but also on the photometric structure of its neighborhood. However, it is unclear precisely how a region's context influences its perceived brightness. Recent research has suggested that brightness estimation may be based on a sophisticated analysis of scene layout in terms of transparency, illumination and shadows. This work has called into question the role of low-level mechanisms, such as lateral inhibition, as explanations for brightness phenomena. Here we describe experiments with displays for which low-level and high-level analyses make qualitatively different predictions, and with which we can quantitatively assess the trade-offs between low-level and high-level factors. We find that brightness percepts in these displays are governed by low-level stimulus properties, even when these percepts are inconsistent with higher-level interpretations of scene layout. These results point to the important role of low-level mechanisms in determining brightness percepts.

A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.