Motion Planning with Six Degrees of Freedom

The motion planning problem is of central importance to the fields of robotics, spatial planning, and automated design. In robotics we are interested in the automatic synthesis of robot motions, given high-level specifications of tasks and geometric models of the robot and obstacles. The Mover's problem is to find a continuous, collision-free path for a moving object through an environment containing obstacles. We present an implemented algorithm for the classical formulation of the three-dimensional Mover's problem: given an arbitrary rigid polyhedral moving object P with three translational and three rotational degrees of freedom, find a continuous, collision-free path taking P from some initial configuration to a desired goal configuration. This thesis describes the first known implementation of a complete algorithm (at a given resolution) for the full six degree of freedom Movers' problem. The algorithm transforms the six degree of freedom planning problem into a point navigation problem in a six-dimensional configuration space (called C-Space). The C-Space obstacles, which characterize the physically unachievable configurations, are directly represented by six-dimensional manifolds whose boundaries are five dimensional C-surfaces. By characterizing these surfaces and their intersections, collision-free paths may be found by the closure of three operators which (i) slide along 5-dimensional intersections of level C-Space obstacles; (ii) slide along 1- to 4-dimensional intersections of level C-surfaces; and (iii) jump between 6 dimensional obstacles. Implementing the point navigation operators requires solving fundamental representational and algorithmic questions: we will derive new structural properties of the C-Space constraints and shoe how to construct and represent C-Surfaces and their intersection manifolds. A definition and new theoretical results are presented for a six-dimensional C-Space extension of the generalized Voronoi diagram, called the C-Voronoi diagram, whose structure we relate to the C-surface intersection manifolds. The representations and algorithms we develop impact many geometric planning problems, and extend to Cartesian manipulators with six degrees of freedom.

Role of Low-level Mechanisms in Brightness Perception

Brightness judgments are a key part of the primate brain's visual analysis of the environment. There is general consensus that the perceived brightness of an image region is based not only on its actual luminance, but also on the photometric structure of its neighborhood. However, it is unclear precisely how a region's context influences its perceived brightness. Recent research has suggested that brightness estimation may be based on a sophisticated analysis of scene layout in terms of transparency, illumination and shadows. This work has called into question the role of low-level mechanisms, such as lateral inhibition, as explanations for brightness phenomena. Here we describe experiments with displays for which low-level and high-level analyses make qualitatively different predictions, and with which we can quantitatively assess the trade-offs between low-level and high-level factors. We find that brightness percepts in these displays are governed by low-level stimulus properties, even when these percepts are inconsistent with higher-level interpretations of scene layout. These results point to the important role of low-level mechanisms in determining brightness percepts.

Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts

Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.