2 resultados para enivornmental scan

em Massachusetts Institute of Technology


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Certain salient structures in images attract our immediate attention without requiring a systematic scan. We present a method for computing saliency by a simple iterative scheme, using a uniform network of locally connected processing elements. The network uses an optimization approach to produce a "saliency map," a representation of the image emphasizing salient locations. The main properties of the network are: (i) the computations are simple and local, (ii) globally salient structures emerge with a small number of iterations, and (iii) as a by-product of the computations, contours are smoothed and gaps are filled in.

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Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB.