High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Granular Attrition due to Rotary Valve in a Pneumatic Conveying System

The rotary valve is a widely used mechanical device in many solids-handling industrial processes. However, it may also be responsible for most of the attrition effects occurring in a typical process. In this study, the attrition effects occurring in a rotary valve operating as a stand-alone device and as part of a pneumatic conveying system were investigated. In the former case granular attrition was carried out at three different rotary valve speeds and the experimental results obtained were found to be in good agreement with the Gwyn correlation. In the latter case three typical air flow rates were used in the pneumatic conveying system. The size distribution of the attrition product obtained at the lowest air flow rate used was not adequately described by the Gwyn correlation. The attrition process and mechanisms involved were analysed and the minimum size of the attrition product obtained from both modes of operations was found to be similar.