Explorations of the Practical Issues of Learning Prediction-Control Tasks Using Temporal Difference Learning Methods

There has been recent interest in using temporal difference learning methods to attack problems of prediction and control. While these algorithms have been brought to bear on many problems, they remain poorly understood. It is the purpose of this thesis to further explore these algorithms, presenting a framework for viewing them and raising a number of practical issues and exploring those issues in the context of several case studies. This includes applying the TD(lambda) algorithm to: 1) learning to play tic-tac-toe from the outcome of self-play and of play against a perfectly-playing opponent and 2) learning simple one-dimensional segmentation tasks.

Exploring Bit-Difference for Approximate KNN Search in High-dimensional Databases

In this paper, we develop a novel index structure to support efficient approximate k-nearest neighbor (KNN) query in high-dimensional databases. In high-dimensional spaces, the computational cost of the distance (e.g., Euclidean distance) between two points contributes a dominant portion of the overall query response time for memory processing. To reduce the distance computation, we first propose a structure (BID) using BIt-Difference to answer approximate KNN query. The BID employs one bit to represent each feature vector of point and the number of bit-difference is used to prune the further points. To facilitate real dataset which is typically skewed, we enhance the BID mechanism with clustering, cluster adapted bitcoder and dimensional weight, named the BID⁺. Extensive experiments are conducted to show that our proposed method yields significant performance advantages over the existing index structures on both real life and synthetic high-dimensional datasets.

A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.