A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.

Statistical Object Recognition

Two formulations of model-based object recognition are described. MAP Model Matching evaluates joint hypotheses of match and pose, while Posterior Marginal Pose Estimation evaluates the pose only. Local search in pose space is carried out with the Expectation--Maximization (EM) algorithm. Recognition experiments are described where the EM algorithm is used to refine and evaluate pose hypotheses in 2D and 3D. Initial hypotheses for the 2D experiments were generated by a simple indexing method: Angle Pair Indexing. The Linear Combination of Views method of Ullman and Basri is employed as the projection model in the 3D experiments.