Finding Texture Boundaries in Images

Texture provides one cue for identifying the physical cause of an intensity edge, such as occlusion, shadow, surface orientation or reflectance change. Marr, Julesz, and others have proposed that texture is represented by small lines or blobs, called 'textons' by Julesz [1981a], together with their attributes, such as orientation, elongation, and intensity. Psychophysical studies suggest that texture boundaries are perceived where distributions of attributes over neighborhoods of textons differ significantly. However, these studies, which deal with synthetic images, neglect to consider two important questions: How can these textons be extracted from images of natural scenes? And how, exactly, are texture boundaries then found? This thesis proposes answers to these questions by presenting an algorithm for computing blobs from natural images and a statistic for measuring the difference between two sample distributions of blob attributes. As part of the blob detection algorithm, methods for estimating image noise are presented, which are applicable to edge detection as well.

A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.