Global Depth Perception from Familiar Scene Structure

In the absence of cues for absolute depth measurements as binocular disparity, motion, or defocus, the absolute distance between the observer and a scene cannot be measured. The interpretation of shading, edges and junctions may provide a 3D model of the scene but it will not inform about the actual "size" of the space. One possible source of information for absolute depth estimation is the image size of known objects. However, this is computationally complex due to the difficulty of the object recognition process. Here we propose a source of information for absolute depth estimation that does not rely on specific objects: we introduce a procedure for absolute depth estimation based on the recognition of the whole scene. The shape of the space of the scene and the structures present in the scene are strongly related to the scale of observation. We demonstrate that, by recognizing the properties of the structures present in the image, we can infer the scale of the scene, and therefore its absolute mean depth. We illustrate the interest in computing the mean depth of the scene with application to scene recognition and object detection.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.