Extracting Salient Curves from Images: An Analysis of the Saliency Network

The Saliency Network proposed by Shashua and Ullman is a well-known approach to the problem of extracting salient curves from images while performing gap completion. This paper analyzes the Saliency Network. The Saliency Network is attractive for several reasons. First, the network generally prefers long and smooth curves over short or wiggly ones. While computing saliencies, the network also fills in gaps with smooth completions and tolerates noise. Finally, the network is locally connected, and its size is proportional to the size of the image. Nevertheless, our analysis reveals certain weaknesses with the method. In particular, we show cases in which the most salient element does not lie on the perceptually most salient curve. Furthermore, in some cases the saliency measure changes its preferences when curves are scaled uniformly. Also, we show that for certain fragmented curves the measure prefers large gaps over a few small gaps of the same total size. In addition, we analyze the time complexity required by the method. We show that the number of steps required for convergence in serial implementations is quadratic in the size of the network, and in parallel implementations is linear in the size of the network. We discuss problems due to coarse sampling of the range of possible orientations. We show that with proper sampling the complexity of the network becomes cubic in the size of the network. Finally, we consider the possibility of using the Saliency Network for grouping. We show that the Saliency Network recovers the most salient curve efficiently, but it has problems with identifying any salient curve other than the most salient one.

A Network Charge-Orineted MOS Transistor Model

The MOS transistor physical model as described in [3] is presented here as a network model. The goal is to obtain an accurate model, suitable for simulation, free from certain problems reported in the literature [13], and conceptually as simple as possible. To achieve this goal the original model had to be extended and modified. The paper presents the derivation of the network model from physical equations, including the corrections which are required for simulation and which compensate for simplifications introduced in the original physical model. Our intrinsic MOS model consists of three nonlinear voltage-controlled capacitors and a dependent current source. The charges of the capacitors and the current of the current source are functions of the voltages $V_{gs}$, $V_{bs}$, and $V_{ds}$. The complete model consists of the intrinsic model plus the parasitics. The apparent simplicity of the model is a result of hiding information in the characteristics of the nonlinear components. The resulted network model has been checked by simulation and analysis. It is shown that the network model is suitable for simulation: It is defined for any value of the voltages; the functions involved are continuous and satisfy Lipschitz conditions with no jumps at region boundaries; Derivatives have been computed symbolically and are available for use by the Newton-Raphson method. The model"s functions can be measured from the terminals. It is also shown that small channel effects can be included in the model. Higher frequency effects can be modeled by using a network consisting of several sections of the basic lumped model. Future plans include a detailed comparison of the network model with models such as SPICE level 3 and a comparison of the multi- section higher frequency model with experiments.