A Network Charge-Orineted MOS Transistor Model

The MOS transistor physical model as described in [3] is presented here as a network model. The goal is to obtain an accurate model, suitable for simulation, free from certain problems reported in the literature [13], and conceptually as simple as possible. To achieve this goal the original model had to be extended and modified. The paper presents the derivation of the network model from physical equations, including the corrections which are required for simulation and which compensate for simplifications introduced in the original physical model. Our intrinsic MOS model consists of three nonlinear voltage-controlled capacitors and a dependent current source. The charges of the capacitors and the current of the current source are functions of the voltages $V_{gs}$, $V_{bs}$, and $V_{ds}$. The complete model consists of the intrinsic model plus the parasitics. The apparent simplicity of the model is a result of hiding information in the characteristics of the nonlinear components. The resulted network model has been checked by simulation and analysis. It is shown that the network model is suitable for simulation: It is defined for any value of the voltages; the functions involved are continuous and satisfy Lipschitz conditions with no jumps at region boundaries; Derivatives have been computed symbolically and are available for use by the Newton-Raphson method. The model"s functions can be measured from the terminals. It is also shown that small channel effects can be included in the model. Higher frequency effects can be modeled by using a network consisting of several sections of the basic lumped model. Future plans include a detailed comparison of the network model with models such as SPICE level 3 and a comparison of the multi- section higher frequency model with experiments.

Qualitative Analysis of MOS Circuits

With the push towards sub-micron technology, transistor models have become increasingly complex. The number of components in integrated circuits has forced designer's efforts and skills towards higher levels of design. This has created a gap between design expertise and the performance demands increasingly imposed by the technology. To alleviate this problem, software tools must be developed that provide the designer with expert advice on circuit performance and design. This requires a theory that links the intuitions of an expert circuit analyst with the corresponding principles of formal theory (i.e. algebra, calculus, feedback analysis, network theory, and electrodynamics), and that makes each underlying assumption explicit.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.