A Government-Binding Based Parser for Warlpiri, a Free-Word Order Language

Free-word order languages have long posed significant problems for standard parsing algorithms. This thesis presents an implemented parser, based on Government-Binding (GB) theory, for a particular free-word order language, Warlpiri, an aboriginal language of central Australia. The words in a sentence of a free-word order language may swap about relatively freely with little effect on meaning: the permutations of a sentence mean essentially the same thing. It is assumed that this similarity in meaning is directly reflected in the syntax. The parser presented here properly processes free word order because it assigns the same syntactic structure to the permutations of a single sentence. The parser also handles fixed word order, as well as other phenomena. On the view presented here, there is no such thing as a "configurational" or "non-configurational" language. Rather, there is a spectrum of languages that are more or less ordered. The operation of this parsing system is quite different in character from that of more traditional rule-based parsing systems, e.g., context-free parsers. In this system, parsing is carried out via the construction of two different structures, one encoding precedence information and one encoding hierarchical information. This bipartite representation is the key to handling both free- and fixed-order phenomena. This thesis first presents an overview of the portion of Warlpiri that can be parsed. Following this is a description of the linguistic theory on which the parser is based. The chapter after that describes the representations and algorithms of the parser. In conclusion, the parser is compared to related work. The appendix contains a substantial list of test cases ??th grammatical and ungrammatical ??at the parser has actually processed.

High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Corner Flows in Free Liquid Films

A lubrication-flow model for a free film in a corner is presented. The model, written in the hyperbolic coordinate system ξ = x² – y², η = 2xy, applies to films that are thin in the η direction. The lubrication approximation yields two coupled evolution equations for the film thickness and the velocity field which, to lowest order, describes plug flow in the hyperbolic coordinates. A free film in a corner evolving under surface tension and gravity is investigated. The rate of thinning of a free film is compared to that of a film evolving over a solid substrate. Viscous shear and normal stresses are both captured in the model and are computed for the entire flow domain. It is shown that normal stress dominates over shear stress in the far field, while shear stress dominates close to the corner.