2 resultados para Spatial Density Dependence

em Massachusetts Institute of Technology


Relevância:

80.00% 80.00%

Publicador:

Resumo:

One of the most prominent industrial applications of heat transfer science and engineering has been electronics thermal control. Driven by the relentless increase in spatial density of microelectronic devices, integrated circuit chip powers have risen by a factor of 100 over the past twenty years, with a somewhat smaller increase in heat flux. The traditional approaches using natural convection and forced-air cooling are becoming less viable as power levels increase. This paper provides a high-level overview of the thermal management problem from the perspective of a practitioner, as well as speculation on the prospects for electronics thermal engineering in years to come.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.