7 resultados para Scale invariant

em Massachusetts Institute of Technology


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The HMAX model has recently been proposed by Riesenhuber & Poggio as a hierarchical model of position- and size-invariant object recognition in visual cortex. It has also turned out to model successfully a number of other properties of the ventral visual stream (the visual pathway thought to be crucial for object recognition in cortex), and particularly of (view-tuned) neurons in macaque inferotemporal cortex, the brain area at the top of the ventral stream. The original modeling study only used ``paperclip'' stimuli, as in the corresponding physiology experiment, and did not explore systematically how model units' invariance properties depended on model parameters. In this study, we aimed at a deeper understanding of the inner workings of HMAX and its performance for various parameter settings and ``natural'' stimulus classes. We examined HMAX responses for different stimulus sizes and positions systematically and found a dependence of model units' responses on stimulus position for which a quantitative description is offered. Interestingly, we find that scale invariance properties of hierarchical neural models are not independent of stimulus class, as opposed to translation invariance, even though both are affine transformations within the image plane.

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In this report, a face recognition system that is capable of detecting and recognizing frontal and rotated faces was developed. Two face recognition methods focusing on the aspect of pose invariance are presented and evaluated - the whole face approach and the component-based approach. The main challenge of this project is to develop a system that is able to identify faces under different viewing angles in realtime. The development of such a system will enhance the capability and robustness of current face recognition technology. The whole-face approach recognizes faces by classifying a single feature vector consisting of the gray values of the whole face image. The component-based approach first locates the facial components and extracts them. These components are normalized and combined into a single feature vector for classification. The Support Vector Machine (SVM) is used as the classifier for both approaches. Extensive tests with respect to the robustness against pose changes are performed on a database that includes faces rotated up to about 40 degrees in depth. The component-based approach clearly outperforms the whole-face approach on all tests. Although this approach isproven to be more reliable, it is still too slow for real-time applications. That is the reason why a real-time face recognition system using the whole-face approach is implemented to recognize people in color video sequences.

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Local descriptors are increasingly used for the task of object recognition because of their perceived robustness with respect to occlusions and to global geometrical deformations. Such a descriptor--based on a set of oriented Gaussian derivative filters-- is used in our recognition system. We report here an evaluation of several techniques for orientation estimation to achieve rotation invariance of the descriptor. We also describe feature selection based on a single training image. Virtual images are generated by rotating and rescaling the image and robust features are selected. The results confirm robust performance in cluttered scenes, in the presence of partial occlusions, and when the object is embedded in different backgrounds.

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We present a new method to perform reliable matching between different images. This method exploits a projective invariant property between concentric circles and the corresponding projected ellipses to find complete region correspondences centered on interest points. The method matches interest points allowing for a full perspective transformation and exploiting all the available luminance information in the regions. Experiments have been conducted on many different data sets to compare our approach to SIFT local descriptors. The results show the new method offers increased robustness to partial visibility, object rotation in depth, and viewpoint angle change.

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The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

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The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.