2 resultados para SMA, Skid resistance, texture, Contact Area, RTM

em Massachusetts Institute of Technology


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This thesis presents a perceptual system for a humanoid robot that integrates abilities such as object localization and recognition with the deeper developmental machinery required to forge those competences out of raw physical experiences. It shows that a robotic platform can build up and maintain a system for object localization, segmentation, and recognition, starting from very little. What the robot starts with is a direct solution to achieving figure/ground separation: it simply 'pokes around' in a region of visual ambiguity and watches what happens. If the arm passes through an area, that area is recognized as free space. If the arm collides with an object, causing it to move, the robot can use that motion to segment the object from the background. Once the robot can acquire reliable segmented views of objects, it learns from them, and from then on recognizes and segments those objects without further contact. Both low-level and high-level visual features can also be learned in this way, and examples are presented for both: orientation detection and affordance recognition, respectively. The motivation for this work is simple. Training on large corpora of annotated real-world data has proven crucial for creating robust solutions to perceptual problems such as speech recognition and face detection. But the powerful tools used during training of such systems are typically stripped away at deployment. Ideally they should remain, particularly for unstable tasks such as object detection, where the set of objects needed in a task tomorrow might be different from the set of objects needed today. The key limiting factor is access to training data, but as this thesis shows, that need not be a problem on a robotic platform that can actively probe its environment, and carry out experiments to resolve ambiguity. This work is an instance of a general approach to learning a new perceptual judgment: find special situations in which the perceptual judgment is easy and study these situations to find correlated features that can be observed more generally.

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Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.