Contact Sensors for Dexterous Robotic Hands

This thesis examines a tactile sensor and a thermal sensor for use with the Utah-MIT dexterous four fingered hand. Sensory feedback is critical or full utilization of its advanced manipulatory capabilities. The hand itself provides tendon tensions and joint angles information. However, planned control algorithms require more information than these sources can provide. The tactile sensor utilizes capacitive transduction with a novel design based entirely on silicone elastomers. It provides an 8 x 8 array of force cells with 1.9 mm center-to-center spacing. A pressure resolution of 8 significant bits is available over a 0 to 200 grams per square mm range. The thermal sensor measures a material's heat conductivity by radiating heat into an object and measuring the resulting temperature variations. This sensor has a 4 x 4 array of temperature cells with 3.5 mm center-to-center spacing. Experiments show that the thermal sensor can discriminate among material by detecting differences in their thermal conduction properties. Both sensors meet the stringent mounting requirements posed by the Utah-MIT hand. Combining them together to form a sensor with both tactile and thermal capabilities will ultimately be possible. The computational requirements for controlling a sensor equipped dexterous hand are severe. Conventional single processor computers do not provide adequate performance. To overcome these difficulties, a computational architecture based on interconnecting high performance microcomputers and a set of software primitives tailored for sensor driven control has been proposed. The system has been implemented and tested on the Utah-MIT hand. The hand, equipped with tactile and thermal sensors and controlled by its computational architecture, is one of the most advanced robotic manipulatory devices available worldwide. Other ongoing projects will exploit these tools and allow the hand to perform tasks that exceed the capabilities of current generation robots.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.