1 resultado para Revolutionary Tendency of Peronism
em Massachusetts Institute of Technology
Filtro por publicador
- Repository Napier (1)
- Abertay Research Collections - Abertay University’s repository (1)
- Academic Archive On-line (Stockholm University; Sweden) (2)
- Academic Research Repository at Institute of Developing Economies (1)
- Acceda, el repositorio institucional de la Universidad de Las Palmas de Gran Canaria. España (2)
- AMS Tesi di Dottorato - Alm@DL - Università di Bologna (1)
- AMS Tesi di Laurea - Alm@DL - Università di Bologna (1)
- Andina Digital - Repositorio UASB-Digital - Universidade Andina Simón Bolívar (3)
- Aquatic Commons (6)
- ArchiMeD - Elektronische Publikationen der Universität Mainz - Alemanha (8)
- Archimer: Archive de l'Institut francais de recherche pour l'exploitation de la mer (2)
- Archive of European Integration (4)
- Archivo Digital para la Docencia y la Investigación - Repositorio Institucional de la Universidad del País Vasco (3)
- Aston University Research Archive (13)
- Biblioteca de Teses e Dissertações da USP (10)
- Biblioteca Digital | Sistema Integrado de Documentación | UNCuyo - UNCUYO. UNIVERSIDAD NACIONAL DE CUYO. (8)
- Biblioteca Digital da Produção Intelectual da Universidade de São Paulo (10)
- Biblioteca Digital da Produção Intelectual da Universidade de São Paulo (BDPI/USP) (6)
- Biblioteca Digital de la Universidad Católica Argentina (1)
- Biblioteca Digital de Teses e Dissertações Eletrônicas da UERJ (17)
- Bioline International (1)
- BORIS: Bern Open Repository and Information System - Berna - Suiça (22)
- Brock University, Canada (4)
- Bulgarian Digital Mathematics Library at IMI-BAS (1)
- CaltechTHESIS (1)
- Cambridge University Engineering Department Publications Database (4)
- CentAUR: Central Archive University of Reading - UK (23)
- Center for Jewish History Digital Collections (3)
- Chinese Academy of Sciences Institutional Repositories Grid Portal (58)
- Cochin University of Science & Technology (CUSAT), India (2)
- Comissão Econômica para a América Latina e o Caribe (CEPAL) (5)
- CORA - Cork Open Research Archive - University College Cork - Ireland (3)
- Corvinus Research Archive - The institutional repository for the Corvinus University of Budapest (2)
- Dalarna University College Electronic Archive (1)
- Deakin Research Online - Australia (34)
- Digital Archives@Colby (1)
- Digital Commons - Michigan Tech (2)
- Digital Commons @ DU | University of Denver Research (1)
- Digital Commons @ Winthrop University (1)
- Digital Commons at Florida International University (5)
- Digital Peer Publishing (1)
- DigitalCommons@The Texas Medical Center (2)
- Diposit Digital de la UB - Universidade de Barcelona (1)
- DRUM (Digital Repository at the University of Maryland) (2)
- Duke University (1)
- eResearch Archive - Queensland Department of Agriculture; Fisheries and Forestry (2)
- Glasgow Theses Service (1)
- Helda - Digital Repository of University of Helsinki (18)
- Indian Institute of Science - Bangalore - Índia (28)
- Instituto Politécnico de Bragança (2)
- Instituto Politécnico de Viseu (2)
- Instituto Politécnico do Porto, Portugal (1)
- Lume - Repositório Digital da Universidade Federal do Rio Grande do Sul (3)
- Massachusetts Institute of Technology (1)
- Memoria Académica - FaHCE, UNLP - Argentina (83)
- National Center for Biotechnology Information - NCBI (7)
- Plymouth Marine Science Electronic Archive (PlyMSEA) (1)
- Portal de Revistas Científicas Complutenses - Espanha (1)
- Publishing Network for Geoscientific & Environmental Data (4)
- QUB Research Portal - Research Directory and Institutional Repository for Queen's University Belfast (27)
- Queensland University of Technology - ePrints Archive (20)
- RCAAP - Repositório Científico de Acesso Aberto de Portugal (1)
- Repositorio Académico de la Universidad Nacional de Costa Rica (2)
- Repositório Científico da Universidade de Évora - Portugal (1)
- Repositorio de la Universidad de Cuenca (1)
- Repositório digital da Fundação Getúlio Vargas - FGV (21)
- Repositório Institucional da Universidade de Aveiro - Portugal (3)
- Repositório Institucional da Universidade de Brasília (1)
- Repositório Institucional da Universidade Federal do Rio Grande do Norte (1)
- Repositorio Institucional de la Universidad Nacional Agraria (1)
- Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho" (195)
- RUN (Repositório da Universidade Nova de Lisboa) - FCT (Faculdade de Cienecias e Technologia), Universidade Nova de Lisboa (UNL), Portugal (1)
- SAPIENTIA - Universidade do Algarve - Portugal (4)
- Savoirs UdeS : plateforme de diffusion de la production intellectuelle de l’Université de Sherbrooke - Canada (1)
- Universidad de Alicante (3)
- Universidad del Rosario, Colombia (8)
- Universidad Politécnica de Madrid (11)
- Universidade de Lisboa - Repositório Aberto (4)
- Universidade dos Açores - Portugal (1)
- Universidade Federal do Pará (16)
- Universidade Federal do Rio Grande do Norte (UFRN) (22)
- Universidade Metodista de São Paulo (7)
- Universidade Técnica de Lisboa (2)
- Universita di Parma (2)
- Universitat de Girona, Spain (3)
- Universitätsbibliothek Kassel, Universität Kassel, Germany (1)
- Université de Montréal (1)
- Université de Montréal, Canada (16)
- University of Michigan (79)
- University of Queensland eSpace - Australia (7)
- University of Washington (1)
Resumo:
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.