3 resultados para Reactive Probabilistic Automata
em Massachusetts Institute of Technology
Resumo:
Robots must act purposefully and successfully in an uncertain world. Sensory information is inaccurate or noisy, actions may have a range of effects, and the robot's environment is only partially and imprecisely modeled. This thesis introduces active randomization by a robot, both in selecting actions to execute and in focusing on sensory information to interpret, as a basic tool for overcoming uncertainty. An example of randomization is given by the strategy of shaking a bin containing a part in order to orient the part in a desired stable state with some high probability. Another example consists of first using reliable sensory information to bring two parts close together, then relying on short random motions to actually mate the two parts, once the part motions lie below the available sensing resolution. Further examples include tapping parts that are tightly wedged, twirling gears before trying to mesh them, and vibrating parts to facilitate a mating operation.
Resumo:
Graphical techniques for modeling the dependencies of randomvariables have been explored in a variety of different areas includingstatistics, statistical physics, artificial intelligence, speech recognition, image processing, and genetics.Formalisms for manipulating these models have been developedrelatively independently in these research communities. In this paper weexplore hidden Markov models (HMMs) and related structures within the general framework of probabilistic independencenetworks (PINs). The paper contains a self-contained review of the basic principles of PINs.It is shown that the well-known forward-backward (F-B) and Viterbialgorithms for HMMs are special cases of more general inference algorithms forarbitrary PINs. Furthermore, the existence of inference and estimationalgorithms for more general graphical models provides a set of analysistools for HMM practitioners who wish to explore a richer class of HMMstructures.Examples of relatively complex models to handle sensorfusion and coarticulationin speech recognitionare introduced and treated within the graphical model framework toillustrate the advantages of the general approach.
Resumo:
We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.