Learning and Example Selection for Object and Pattern Detection

This thesis presents a learning based approach for detecting classes of objects and patterns with variable image appearance but highly predictable image boundaries. It consists of two parts. In part one, we introduce our object and pattern detection approach using a concrete human face detection example. The approach first builds a distribution-based model of the target pattern class in an appropriate feature space to describe the target's variable image appearance. It then learns from examples a similarity measure for matching new patterns against the distribution-based target model. The approach makes few assumptions about the target pattern class and should therefore be fairly general, as long as the target class has predictable image boundaries. Because our object and pattern detection approach is very much learning-based, how well a system eventually performs depends heavily on the quality of training examples it receives. The second part of this thesis looks at how one can select high quality examples for function approximation learning tasks. We propose an {em active learning} formulation for function approximation, and show for three specific approximation function classes, that the active example selection strategy learns its target with fewer data samples than random sampling. We then simplify the original active learning formulation, and show how it leads to a tractable example selection paradigm, suitable for use in many object and pattern detection problems.

AMAR: A Computational Model of Autosegmental Phonology

This report describes a computational system with which phonologists may describe a natural language in terms of autosegmental phonology, currently the most advanced theory pertaining to the sound systems of human languages. This system allows linguists to easily test autosegmental hypotheses against a large corpus of data. The system was designed primarily with tonal systems in mind, but also provides support for tree or feature matrix representation of phonemes (as in The Sound Pattern of English), as well as syllable structures and other aspects of phonological theory. Underspecification is allowed, and trees may be specified before, during, and after rule application. The association convention is automatically applied, and other principles such as the conjunctivity condition are supported. The method of representation was designed such that rules are designated in as close a fashion as possible to the existing conventions of autosegmental theory while adhering to a textual constraint for maximum portability.

Derivation of an Efficient Rule System Pattern Matcher

Formalizing algorithm derivations is a necessary prerequisite for developing automated algorithm design systems. This report describes a derivation of an algorithm for incrementally matching conjunctive patterns against a growing database. This algorithm, which is modeled on the Rete matcher used in the OPS5 production system, forms a basis for efficiently implementing a rule system. The highlights of this derivation are: (1) a formal specification for the rule system matching problem, (2) derivation of an algorithm for this task using a lattice-theoretic model of conjunctive and disjunctive variable substitutions, and (3) optimization of this algorithm, using finite differencing, for incrementally processing new data.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.