High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Gait Analysis for Classification

This thesis describes a representation of gait appearance for the purpose of person identification and classification. This gait representation is based on simple localized image features such as moments extracted from orthogonal view video silhouettes of human walking motion. A suite of time-integration methods, spanning a range of coarseness of time aggregation and modeling of feature distributions, are applied to these image features to create a suite of gait sequence representations. Despite their simplicity, the resulting feature vectors contain enough information to perform well on human identification and gender classification tasks. We demonstrate the accuracy of recognition on gait video sequences collected over different days and times and under varying lighting environments. Each of the integration methods are investigated for their advantages and disadvantages. An improved gait representation is built based on our experiences with the initial set of gait representations. In addition, we show gender classification results using our gait appearance features, the effect of our heuristic feature selection method, and the significance of individual features.

Properties of Support Vector Machines

Support Vector Machines (SVMs) perform pattern recognition between two point classes by finding a decision surface determined by certain points of the training set, termed Support Vectors (SV). This surface, which in some feature space of possibly infinite dimension can be regarded as a hyperplane, is obtained from the solution of a problem of quadratic programming that depends on a regularization parameter. In this paper we study some mathematical properties of support vectors and show that the decision surface can be written as the sum of two orthogonal terms, the first depending only on the margin vectors (which are SVs lying on the margin), the second proportional to the regularization parameter. For almost all values of the parameter, this enables us to predict how the decision surface varies for small parameter changes. In the special but important case of feature space of finite dimension m, we also show that there are at most m+1 margin vectors and observe that m+1 SVs are usually sufficient to fully determine the decision surface. For relatively small m this latter result leads to a consistent reduction of the SV number.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.

Bit-Width Analysis for General Applications

It has been widely known that a significant part of the bits are useless or even unused during the program execution. Bit-width analysis targets at finding the minimum bits needed for each variable in the program, which ensures the execution correctness and resources saving. In this paper, we proposed a static analysis method for bit-widths in general applications, which approximates conservatively at compile time and is independent of runtime conditions. While most related work focus on integer applications, our method is also tailored and applicable to floating point variables, which could be extended to transform floating point number into fixed point numbers together with precision analysis. We used more precise representations for data value ranges of both scalar and array variables. Element level analysis is carried out for arrays. We also suggested an alternative for the standard fixed-point iterations in bi-directional range analysis. These techniques are implemented on the Trimaran compiler structure and tested on a set of benchmarks to show the results.