6 resultados para NOx storage reduction
em Massachusetts Institute of Technology
Resumo:
Signalling off-chip requires significant current. As a result, a chip's power-supply current changes drastically during certain output-bus transitions. These current fluctuations cause a voltage drop between the chip and circuit board due to the parasitic inductance of the power-supply package leads. Digital designers often go to great lengths to reduce this "transmitted" noise. Cray, for instance, carefully balances output signals using a technique called differential signalling to guarantee a chip has constant output current. Transmitted-noise reduction costs Cray a factor of two in output pins and wires. Coding achieves similar results at smaller costs.
Resumo:
This report explores how recurrent neural networks can be exploited for learning high-dimensional mappings. Since recurrent networks are as powerful as Turing machines, an interesting question is how recurrent networks can be used to simplify the problem of learning from examples. The main problem with learning high-dimensional functions is the curse of dimensionality which roughly states that the number of examples needed to learn a function increases exponentially with input dimension. This thesis proposes a way of avoiding this problem by using a recurrent network to decompose a high-dimensional function into many lower dimensional functions connected in a feedback loop.
Resumo:
Biological systems exhibit rich and complex behavior through the orchestrated interplay of a large array of components. It is hypothesized that separable subsystems with some degree of functional autonomy exist; deciphering their independent behavior and functionality would greatly facilitate understanding the system as a whole. Discovering and analyzing such subsystems are hence pivotal problems in the quest to gain a quantitative understanding of complex biological systems. In this work, using approaches from machine learning, physics and graph theory, methods for the identification and analysis of such subsystems were developed. A novel methodology, based on a recent machine learning algorithm known as non-negative matrix factorization (NMF), was developed to discover such subsystems in a set of large-scale gene expression data. This set of subsystems was then used to predict functional relationships between genes, and this approach was shown to score significantly higher than conventional methods when benchmarking them against existing databases. Moreover, a mathematical treatment was developed to treat simple network subsystems based only on their topology (independent of particular parameter values). Application to a problem of experimental interest demonstrated the need for extentions to the conventional model to fully explain the experimental data. Finally, the notion of a subsystem was evaluated from a topological perspective. A number of different protein networks were examined to analyze their topological properties with respect to separability, seeking to find separable subsystems. These networks were shown to exhibit separability in a nonintuitive fashion, while the separable subsystems were of strong biological significance. It was demonstrated that the separability property found was not due to incomplete or biased data, but is likely to reflect biological structure.
Resumo:
Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.
Resumo:
This paper considers a connection between the deterministic and noisy behavior of nonlinear networks. Specifically, a particular bridge circuit is examined which has two possibly nonlinear energy storage elements. By proper choice of the constitutive relations for the network elements, the deterministic terminal behavior reduces to that of a single linear resistor. This reduction of the deterministic terminal behavior, in which a natural frequency of a linear circuit does not appear in the driving-point impedance, has been shown in classical circuit theory books (e.g. [1, 2]). The paper shows that, in addition to the reduction of the deterministic behavior, the thermal noise at the terminals of the network, arising from the usual Nyquist-Johnson noise model associated with each resistor in the network, is also exactly that of a single linear resistor. While this result for the linear time-invariant (LTI) case is a direct consequence of a well-known result for RLC circuits, the nonlinear result is novel. We show that the terminal noise current is precisely that predicted by the Nyquist-Johnson model for R if the driving voltage is zero or constant, but not if the driving voltage is time-dependent or the inductor and capacitor are time-varying
Resumo:
In this paper, a new methodology for predicting fluid free surface shape using Model Order Reduction (MOR) is presented. Proper Orthogonal Decomposition combined with a linear interpolation procedure for its coefficient is applied to a problem involving bubble dynamics near to a free surface. A model is developed to accurately and efficiently capture the variation of the free surface shape with different bubble parameters. In addition, a systematic approach is developed within the MOR framework to find the best initial locations and pressures for a set of bubbles beneath the quiescent free surface such that the resultant free surface attained is close to a desired shape. Predictions of the free surface in two-dimensions and three-dimensions are presented.