A Government-Binding Based Parser for Warlpiri, a Free-Word Order Language

Free-word order languages have long posed significant problems for standard parsing algorithms. This thesis presents an implemented parser, based on Government-Binding (GB) theory, for a particular free-word order language, Warlpiri, an aboriginal language of central Australia. The words in a sentence of a free-word order language may swap about relatively freely with little effect on meaning: the permutations of a sentence mean essentially the same thing. It is assumed that this similarity in meaning is directly reflected in the syntax. The parser presented here properly processes free word order because it assigns the same syntactic structure to the permutations of a single sentence. The parser also handles fixed word order, as well as other phenomena. On the view presented here, there is no such thing as a "configurational" or "non-configurational" language. Rather, there is a spectrum of languages that are more or less ordered. The operation of this parsing system is quite different in character from that of more traditional rule-based parsing systems, e.g., context-free parsers. In this system, parsing is carried out via the construction of two different structures, one encoding precedence information and one encoding hierarchical information. This bipartite representation is the key to handling both free- and fixed-order phenomena. This thesis first presents an overview of the portion of Warlpiri that can be parsed. Following this is a description of the linguistic theory on which the parser is based. The chapter after that describes the representations and algorithms of the parser. In conclusion, the parser is compared to related work. The appendix contains a substantial list of test cases ??th grammatical and ungrammatical ??at the parser has actually processed.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.

Corner Flows in Free Liquid Films

A lubrication-flow model for a free film in a corner is presented. The model, written in the hyperbolic coordinate system ξ = x² – y², η = 2xy, applies to films that are thin in the η direction. The lubrication approximation yields two coupled evolution equations for the film thickness and the velocity field which, to lowest order, describes plug flow in the hyperbolic coordinates. A free film in a corner evolving under surface tension and gravity is investigated. The rate of thinning of a free film is compared to that of a film evolving over a solid substrate. Viscous shear and normal stresses are both captured in the model and are computed for the entire flow domain. It is shown that normal stress dominates over shear stress in the far field, while shear stress dominates close to the corner.