Performance-Driven Microfabrication-Oriented Methodology for MEMS Conceptual Design with Application in Microfluidic Device Design

Performance and manufacturability are two important issues that must be taken into account during MEMS design. Existing MEMS design models or systems follow a process-driven design paradigm, that is, design starts from the specification of process sequence or the customization of foundry-ready process template. There has been essentially no methodology or model that supports generic, high-level design synthesis for MEMS conceptual design. As a result, there lacks a basis for specifying the initial process sequences. To address this problem, this paper proposes a performance-driven, microfabrication-oriented methodology for MEMS conceptual design. A unified behaviour representation method is proposed which incorporates information of both physical interactions and chemical/biological/other reactions. Based on this method, a behavioural process based design synthesis model is proposed, which exploits multidisciplinary phenomena for design solutions, including both the structural components and their configuration for the MEMS device, as well as the necessary substances for the chemical/biological/other reactions. The model supports both forward and backward synthetic search for suitable phenomena. To ensure manufacturability, a strategy of using microfabrication-oriented phenomena as design knowledge is proposed, where the phenomena are developed from existing MEMS devices that have associated MEMS-specific microfabrication processes or foundry-ready process templates. To test the applicability of the proposed methodology, the paper also studies microfluidic device design and uses a micro-pump design for the case study.

A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.