Formal Multilevel Hierarchical Verification of Synchronous MOS Circuits

I have designed and implemented a system for the multilevel verification of synchronous MOS VLSI circuits. The system, called Silica Pithecus, accepts the schematic of an MOS circuit and a specification of the circuit's intended digital behavior. Silica Pithecus determines if the circuit meets its specification. If the circuit fails to meet its specification Silica Pithecus returns to the designer the reason for the failure. Unlike earlier verifiers which modelled primitives (e.g., transistors) as unidirectional digital devices, Silica Pithecus models primitives more realistically. Transistors are modelled as bidirectional devices of varying resistances, and nodes are modelled as capacitors. Silica Pithecus operates hierarchically, interactively, and incrementally. Major contributions of this research include a formal understanding of the relationship between different behavioral descriptions (e.g., signal, boolean, and arithmetic descriptions) of the same device, and a formalization of the relationship between the structure, behavior, and context of device. Given these formal structures my methods find sufficient conditions on the inputs of circuits which guarantee the correct operation of the circuit in the desired descriptive domain. These methods are algorithmic and complete. They also handle complex phenomena such as races and charge sharing. Informal notions such as races and hazards are shown to be derivable from the correctness conditions used by my methods.

A Network Charge-Orineted MOS Transistor Model

The MOS transistor physical model as described in [3] is presented here as a network model. The goal is to obtain an accurate model, suitable for simulation, free from certain problems reported in the literature [13], and conceptually as simple as possible. To achieve this goal the original model had to be extended and modified. The paper presents the derivation of the network model from physical equations, including the corrections which are required for simulation and which compensate for simplifications introduced in the original physical model. Our intrinsic MOS model consists of three nonlinear voltage-controlled capacitors and a dependent current source. The charges of the capacitors and the current of the current source are functions of the voltages $V_{gs}$, $V_{bs}$, and $V_{ds}$. The complete model consists of the intrinsic model plus the parasitics. The apparent simplicity of the model is a result of hiding information in the characteristics of the nonlinear components. The resulted network model has been checked by simulation and analysis. It is shown that the network model is suitable for simulation: It is defined for any value of the voltages; the functions involved are continuous and satisfy Lipschitz conditions with no jumps at region boundaries; Derivatives have been computed symbolically and are available for use by the Newton-Raphson method. The model"s functions can be measured from the terminals. It is also shown that small channel effects can be included in the model. Higher frequency effects can be modeled by using a network consisting of several sections of the basic lumped model. Future plans include a detailed comparison of the network model with models such as SPICE level 3 and a comparison of the multi- section higher frequency model with experiments.

Qualitative Analysis of MOS Circuits

With the push towards sub-micron technology, transistor models have become increasingly complex. The number of components in integrated circuits has forced designer's efforts and skills towards higher levels of design. This has created a gap between design expertise and the performance demands increasingly imposed by the technology. To alleviate this problem, software tools must be developed that provide the designer with expert advice on circuit performance and design. This requires a theory that links the intuitions of an expert circuit analyst with the corresponding principles of formal theory (i.e. algebra, calculus, feedback analysis, network theory, and electrodynamics), and that makes each underlying assumption explicit.

Non-linear mechanical behavior of the elastomer polydimethylsiloxane (PDMS) used in the manufacture of microfluidic devices

Polydimethylsiloxane (PDMS) is the elastomer of choice to create a variety of microfluidic devices by soft lithography techniques (eg., [1], [2], [3], [4]). Accurate and reliable design, manufacture, and operation of microfluidic devices made from PDMS, require a detailed characterization of the deformation and failure behavior of the material. This paper discusses progress in a recently-initiated research project towards this goal. We have conducted large-deformation tension and compression experiments on traditional macroscale specimens, as well as microscale tension experiments on thin-film (≈ 50µm thickness) specimens of PDMS with varying ratios of monomer:curing agent (5:1, 10:1, 20:1). We find that the stress-stretch response of these materials shows significant variability, even for nominally identically prepared specimens. A non-linear, large-deformation rubber-elasticity model [5], [6] is applied to represent the behavior of PDMS. The constitutive model has been implemented in a finite-element program [7] to aid the design of microfluidic devices made from this material. As a first attempt towards the goal of estimating the non-linear material parameters for PDMS from indentation experiments, we have conducted micro-indentation experiments using a spherical indenter-tip, and carried out corresponding numerical simulations to verify how well the numerically-predicted P(load-h(depth of indentation) curves compare with the corresponding experimental measurements. The results are encouraging, and show the possibility of estimating the material parameters for PDMS from relatively simple micro-indentation experiments, and corresponding numerical simulations.

Fabrication of Controlled Release Devices Using Supercritical Antisolvent Method

In this study, the supercritical antisolvent with enhanced mass transfer method (SASEM) is used to fabricate micro and nanoparticles of biocompatible and biodegradable polymer PLGA (poly DL lactide co glycolic acid). This process may be extended to the encapsulation of drugs in these micro and nanoparticles for controlled release purposes. Conventional supercritical antisolvent (SAS) process involves spraying a solution (organic solvent + dissolved polymer) into supercritical fluid (CO[subscript 2]), which acts as an antisolvent. The high rate of mass transfer between organic solvent and supercritical CO[subscript 2] results in supersaturation of the polymer in the spray droplet and precipitation of the polymer as micro or nanoparticles occurs. In the SASEM method, ultrasonic vibration is used to atomize the solution entering the high pressure with supercritical CO[subscript 2]. At the same time, the ultrasonic vibration generated turbulence in the high pressure vessel, leading to better mass transfer between the organic solvent and the supercritical CO₂. In this study, two organic solvents, acetone and dichloromethane (DCM) were used in the SASEM process. Phase Doppler Particle Analyzer (PDPA) was used to study the ultrasonic atomization of liquid using the ultrasonic probe for the SASEM process. Scanning Electron Microscopy (SEM) was used to study the size and morphology of the polymer particles collected at the end of the process.