Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.

A Low Power Wide Dynamic Range Envelope Detector

We report a 75dB, 2.8mW, 100Hz-10kHz envelope detector in a 1.5mm 2.8V CMOS technology. The envelope detector performs input-dc-insensitive voltage-to-currentconverting rectification followed by novel nanopower current-mode peak detection. The use of a subthreshold wide- linear-range transconductor (WLR OTA) allows greater than 1.7Vpp input voltage swings. We show theoretically that this optimal performance is technology-independent for the given topology and may be improved only by spending more power. A novel circuit topology is used to perform 140nW peak detection with controllable attack and release time constants. The lower limits of envelope detection are determined by the more dominant of two effects: The first effect is caused by the inability of amplified high-frequency signals to exceed the deadzone created by exponential nonlinearities in the rectifier. The second effect is due to an output current caused by thermal noise rectification. We demonstrate good agreement of experimentally measured results with theory. The envelope detector is useful in low power bionic implants for the deaf, hearing aids, and speech-recognition front ends. Extension of the envelope detector to higher- frequency applications is straightforward if power consumption is inc