2 resultados para Limited-buffer
em Massachusetts Institute of Technology
Resumo:
This report explores methods for determining the pose of a grasped object using only limited sensor information. The problem of pose determination is to find the position of an object relative to the hand. The information is useful when grasped objects are being manipulated. The problem is hard because of the large space of grasp configurations and the large amount of uncertainty inherent in dexterous hand control. By studying limited sensing approaches, the problem's inherent constraints can be better understood. This understanding helps to show how additional sensor data can be used to make recognition methods more effective and robust.
Resumo:
We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.