Generating Compliant Motion of Objects with an Articulated Hand

The flexibility of the robot is the key to its success as a viable aid to production. Flexibility of a robot can be explained in two directions. The first is to increase the physical generality of the robot such that it can be easily reconfigured to handle a wide variety of tasks. The second direction is to increase the ability of the robot to interact with its environment such that tasks can still be successfully completed in the presence of uncertainties. The use of articulated hands are capable of adapting to a wide variety of grasp shapes, hence reducing the need for special tooling. The availability of low mass, high bandwidth points close to the manipulated object also offers significant improvements I the control of fine motions. This thesis provides a framework for using articulated hands to perform local manipulation of objects. N particular, it addresses the issues in effecting compliant motions of objects in Cartesian space. The Stanford/JPL hand is used as an example to illustrate a number of concepts. The examples provide a unified methodology for controlling articulated hands grasping with point contacts. We also present a high-level hand programming system based on the methodologies developed in this thesis. Compliant motion of grasped objects and dexterous manipulations can be easily described in the LISP-based hand programming language.

A Note on the Generalization Performance of Kernel Classifiers with Margin

We present distribution independent bounds on the generalization misclassification performance of a family of kernel classifiers with margin. Support Vector Machine classifiers (SVM) stem out of this class of machines. The bounds are derived through computations of the $V_gamma$ dimension of a family of loss functions where the SVM one belongs to. Bounds that use functions of margin distributions (i.e. functions of the slack variables of SVM) are derived.

Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts

Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.