Why are There so Few Female Computer Scientists?

This report examines why women pursue careers in computer science and related fields far less frequently than men do. In 1990, only 13% of PhDs in computer science went to women, and only 7.8% of computer science professors were female. Causes include the different ways in which boys and girls are raised, the stereotypes of female engineers, subtle biases that females face, problems resulting from working in predominantly male environments, and sexual biases in language. A theme of the report is that women's underrepresentation is not primarily due to direct discrimination but to subconscious behavior that perpetuates the status quo.

Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate

Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.