Electrical Design: A Problem for Artificial Intelligence Research

This report outlines the problem of intelligent failure recovery in a problem-solver for electrical design. We want our problem solver to learn as much as it can from its mistakes. Thus we cast the engineering design process on terms of Problem Solving by Debugging Almost-Right Plans, a paradigm for automatic problem solving based on the belief that creation and removal of "bugs" is an unavoidable part of the process of solving a complex problem. The process of localization and removal of bugs called for by the PSBDARP theory requires an approach to engineering analysis in which every result has a justification which describes the exact set of assumptions it depends upon. We have developed a program based on Analysis by Propagation of Constraints which can explain the basis of its deductions. In addition to being useful to a PSBDARP designer, these justifications are used in Dependency-Directed Backtracking to limit the combinatorial search in the analysis routines. Although the research we will describe is explicitly about electrical circuits, we believe that similar principles and methods are employed by other kinds of engineers, including computer programmers.

Numerical comparison between Maxwell stress method and equivalent multipole approach for calculation of the dielectrophoretic force in octupolar cell traps

This work presents detailed numerical calculations of the dielectrophoretic force in octupolar traps designed for single-cell trapping. A trap with eight planar electrodes is studied for spherical and ellipsoidal particles using an indirect implementation of the boundary element method (BEM). Multipolar approximations of orders one to three are compared with the full Maxwell stress tensor (MST) calculation of the electrical force on spherical particles. Ellipsoidal particles are also studied, but in their case only the dipolar approximation is available for comparison with the MST solution. The results show that the full MST calculation is only required in the study of non-spherical particles.

Formal Multilevel Hierarchical Verification of Synchronous MOS Circuits

I have designed and implemented a system for the multilevel verification of synchronous MOS VLSI circuits. The system, called Silica Pithecus, accepts the schematic of an MOS circuit and a specification of the circuit's intended digital behavior. Silica Pithecus determines if the circuit meets its specification. If the circuit fails to meet its specification Silica Pithecus returns to the designer the reason for the failure. Unlike earlier verifiers which modelled primitives (e.g., transistors) as unidirectional digital devices, Silica Pithecus models primitives more realistically. Transistors are modelled as bidirectional devices of varying resistances, and nodes are modelled as capacitors. Silica Pithecus operates hierarchically, interactively, and incrementally. Major contributions of this research include a formal understanding of the relationship between different behavioral descriptions (e.g., signal, boolean, and arithmetic descriptions) of the same device, and a formalization of the relationship between the structure, behavior, and context of device. Given these formal structures my methods find sufficient conditions on the inputs of circuits which guarantee the correct operation of the circuit in the desired descriptive domain. These methods are algorithmic and complete. They also handle complex phenomena such as races and charge sharing. Informal notions such as races and hazards are shown to be derivable from the correctness conditions used by my methods.

Modelling the Somantic Electrical Response of Hippocampal Pyramidal Neurons

A modeling study of hippocampal pyramidal neurons is described. This study is based on simulations using HIPPO, a program which simulates the somatic electrical activity of these cells. HIPPO is based on a) descriptions of eleven non-linear conductances that have been either reported for this class of cell in the literature or postulated in the present study, and b) an approximation of the electrotonic structure of the cell that is derived in this thesis, based on data for the linear properties of these cells. HIPPO is used a) to integrate empirical data from a variety of sources on the electrical characteristics of this type of cell, b) to investigate the functional significance of the various elements that underly the electrical behavior, and c) to provide a tool for the electrophysiologist to supplement direct observation of these cells and provide a method of testing speculations regarding parameters that are not accessible.

Taming Chaotic Circuits

Control algorithms that exploit chaotic behavior can vastly improve the performance of many practical and useful systems. The program Perfect Moment is built around a collection of such techniques. It autonomously explores a dynamical system's behavior, using rules embodying theorems and definitions from nonlinear dynamics to zero in on interesting and useful parameter ranges and state-space regions. It then constructs a reference trajectory based on that information and causes the system to follow it. This program and its results are illustrated with several examples, among them the phase-locked loop, where sections of chaotic attractors are used to increase the capture range of the circuit.

Biologically Plausible Neural Circuits for Realization of Maximum Operations

Object recognition in the visual cortex is based on a hierarchical architecture, in which specialized brain regions along the ventral pathway extract object features of increasing levels of complexity, accompanied by greater invariance in stimulus size, position, and orientation. Recent theoretical studies postulate a non-linear pooling function, such as the maximum (MAX) operation could be fundamental in achieving such invariance. In this paper, we are concerned with neurally plausible mechanisms that may be involved in realizing the MAX operation. Four canonical circuits are proposed, each based on neural mechanisms that have been previously discussed in the context of cortical processing. Through simulations and mathematical analysis, we examine the relative performance and robustness of these mechanisms. We derive experimentally verifiable predictions for each circuit and discuss their respective physiological considerations.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits

Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measured using the four-point test. The effects of bonding temperature, physical bonding and failure mechanisms were investigated. The surface effects on copper surface due to pre-bond clean (with glacial acetic acid) were also looked into. A maximum average bond toughness of approximately 35 J/m² was obtained bonding temperature 300 C.