Dissociated Dipoles: Image representation via non-local comparisons

A fundamental question in visual neuroscience is how to represent image structure. The most common representational schemes rely on differential operators that compare adjacent image regions. While well-suited to encoding local relationships, such operators have significant drawbacks. Specifically, each filter's span is confounded with the size of its sub-fields, making it difficult to compare small regions across large distances. We find that such long-distance comparisons are more tolerant to common image transformations than purely local ones, suggesting they may provide a useful vocabulary for image encoding. . We introduce the "Dissociated Dipole," or "Sticks" operator, for encoding non-local image relationships. This operator de-couples filter span from sub-field size, enabling parametric movement between edge and region-based representation modes. We report on the perceptual plausibility of the operator, and the computational advantages of non-local encoding. Our results suggest that non-local encoding may be an effective scheme for representing image structure.

Generalization over contrast and mirror reversal, but not figure-ground reversal, in an "edge-based

Baylis & Driver (Nature Neuroscience, 2001) have recently presented data on the response of neurons in macaque inferotemporal cortex (IT) to various stimulus transformations. They report that neurons can generalize over contrast and mirror reversal, but not over figure-ground reversal. This finding is taken to demonstrate that ``the selectivity of IT neurons is not determined simply by the distinctive contours in a display, contrary to simple edge-based models of shape recognition'', citing our recently presented model of object recognition in cortex (Riesenhuber & Poggio, Nature Neuroscience, 1999). In this memo, I show that the main effects of the experiment can be obtained by performing the appropriate simulations in our simple feedforward model. This suggests for IT cell tuning that the possible contributions of explicit edge assignment processes postulated in (Baylis & Driver, 2001) might be smaller than expected.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.