SodaBot: A Software Agent Environment and Construction System

This thesis presents SodaBot, a general-purpose software agent user-environment and construction system. Its primary component is the basic software agent --- a computational framework for building agents which is essentially an agent operating system. We also present a new language for programming the basic software agent whose primitives are designed around human-level descriptions of agent activity. Via this programming language, users can easily implement a wide-range of typical software agent applications, e.g. personal on-line assistants and meeting scheduling agents. The SodaBot system has been implemented and tested, and its description comprises the bulk of this thesis.

Robust Agent Control of an Autonomous Robot with Many Sensors and Actuators

This thesis presents methods for implementing robust hexpod locomotion on an autonomous robot with many sensors and actuators. The controller is based on the Subsumption Architecture and is fully distributed over approximately 1500 simple, concurrent processes. The robot, Hannibal, weighs approximately 6 pounds and is equipped with over 100 physical sensors, 19 degrees of freedom, and 8 on board computers. We investigate the following topics in depth: distributed control of a complex robot, insect-inspired locomotion control for gait generation and rough terrain mobility, and fault tolerance. The controller was implemented, debugged, and tested on Hannibal. Through a series of experiments, we examined Hannibal's gait generation, rough terrain locomotion, and fault tolerance performance. These results demonstrate that Hannibal exhibits robust, flexible, real-time locomotion over a variety of terrain and tolerates a multitude of hardware failures.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.