Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.

Transport of Sub-micron Aerosols in Bifurcations

The convective-diffusive transport of sub-micron aerosols in an oscillatory laminar flow within a 2-D single bifurcation is studied, using order-of-magnitude analysis and numerical simulation using a commercial software (FEMLAB®). Based on the similarity between momentum and mass transfer equations, various transient mass transport regimes are classified and scaled according to Strouhal and beta numbers. Results show that the mass transfer rate is highest at the carinal ridge and there is a phase-shift in diffusive transport time if the beta number is greater than one. It is also shown that diffusive mass transfer becomes independent of the oscillating outer flow if the Strouhal number is greater than one.