Passive and Active Grasping with a Prehensile Robot End-Effector

This report presents a design of a new type of robot end-effector with inherent mechanical grasping capabilities. Concentrating on designing an end-effector to grasp a simple class of objects, cylindrical, allowed a design with only one degree of actuation. The key features of this design are high bandwidth response to forces, passive grasping capabilities, ease of control, and ability to wrap around objects with simple geometries providing form closure. A prototype of this mechanism was built to evaluate these features.

Analysis and Implementation of Robust Grasping Behaviors

This thesis addresses the problem of developing automatic grasping capabilities for robotic hands. Using a 2-jointed and a 4-jointed nmodel of the hand, we establish the geometric conditions necessary for achieving form closure grasps of cylindrical objects. We then define and show how to construct the grasping pre-image for quasi-static (friction dominated) and zero-G (inertia dominated) motions for sensorless and sensor-driven grasps with and without arm motions. While the approach does not rely on detailed modeling, it is computationally inexpensive, reliable, and easy to implement. Example behaviors were successfully implemented on the Salisbury hand and on a planar 2-fingered, 4 degree-of-freedom hand.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Numerical Simulation of Electroosmotic Flow with Step Change in Zeta Potential

Electroosmotic flow is a convenient mechanism for transporting polar fluid in a microfluidic device. The flow is generated through the application of an external electric field that acts on the free charges that exists in a thin Debye layer at the channel walls. The charge on the wall is due to the chemistry of the solid-fluid interface, and it can vary along the channel, e.g. due to modification of the wall. This investigation focuses on the simulation of the electroosmotic flow (EOF) profile in a cylindrical microchannel with step change in zeta potential. The modified Navier-Stoke equation governing the velocity field and a non-linear two-dimensional Poisson-Boltzmann equation governing the electrical double-layer (EDL) field distribution are solved numerically using finite control-volume method. Continuities of flow rate and electric current are enforced resulting in a non-uniform electrical field and pressure gradient distribution along the channel. The resulting parabolic velocity distribution at the junction of the step change in zeta potential, which is more typical of a pressure-driven velocity flow profile, is obtained.