3 resultados para CONTROLLABLE NANOMATERIALS

em Massachusetts Institute of Technology


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Traditionally, we've focussed on the question of how to make a system easy to code the first time, or perhaps on how to ease the system's continued evolution. But if we look at life cycle costs, then we must conclude that the important question is how to make a system easy to operate. To do this we need to make it easy for the operators to see what's going on and to then manipulate the system so that it does what it is supposed to. This is a radically different criterion for success. What makes a computer system visible and controllable? This is a difficult question, but it's clear that today's modern operating systems with nearly 50 million source lines of code are neither. Strikingly, the MIT Lisp Machine and its commercial successors provided almost the same functionality as today's mainstream sytsems, but with only 1 Million lines of code. This paper is a retrospective examination of the features of the Lisp Machine hardware and software system. Our key claim is that by building the Object Abstraction into the lowest tiers of the system, great synergy and clarity were obtained. It is our hope that this is a lesson that can impact tomorrow's designs. We also speculate on how the spirit of the Lisp Machine could be extended to include a comprehensive access control model and how new layers of abstraction could further enrich this model.

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We report a 75dB, 2.8mW, 100Hz-10kHz envelope detector in a 1.5mm 2.8V CMOS technology. The envelope detector performs input-dc-insensitive voltage-to-currentconverting rectification followed by novel nanopower current-mode peak detection. The use of a subthreshold wide- linear-range transconductor (WLR OTA) allows greater than 1.7Vpp input voltage swings. We show theoretically that this optimal performance is technology-independent for the given topology and may be improved only by spending more power. A novel circuit topology is used to perform 140nW peak detection with controllable attack and release time constants. The lower limits of envelope detection are determined by the more dominant of two effects: The first effect is caused by the inability of amplified high-frequency signals to exceed the deadzone created by exponential nonlinearities in the rectifier. The second effect is due to an output current caused by thermal noise rectification. We demonstrate good agreement of experimentally measured results with theory. The envelope detector is useful in low power bionic implants for the deaf, hearing aids, and speech-recognition front ends. Extension of the envelope detector to higher- frequency applications is straightforward if power consumption is inc

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High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.