The Quadric Reference Surface: Theory and Applications

The conceptual component of this work is about "reference surfaces'' which are the dual of reference frames often used for shape representation purposes. The theoretical component of this work involves the question of whether one can find a unique (and simple) mapping that aligns two arbitrary perspective views of an opaque textured quadric surface in 3D, given (i) few corresponding points in the two views, or (ii) the outline conic of the surface in one view (only) and few corresponding points in the two views. The practical component of this work is concerned with applying the theoretical results as tools for the task of achieving full correspondence between views of arbitrary objects.

LLSIM Reference Manual

A program that simulates a Digital Equipment Corporation PDP-11 computer and many of its peripherals on the AI Laboratory Time Sharing System (ITS) is described from a user's reference point of view. This simulator has a built in DDT-like command level which provides the user with the normal range of DDT facilities but also with several special debugging features built into the simulator. The DDT command language was implemented by Richard M. Stallman while the simulator was written by the author of this memo.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.