Intelligence by Design: Principles of Modularity and Coordination for Engineerin

All intelligence relies on search --- for example, the search for an intelligent agent's next action. Search is only likely to succeed in resource-bounded agents if they have already been biased towards finding the right answer. In artificial agents, the primary source of bias is engineering. This dissertation describes an approach, Behavior-Oriented Design (BOD) for engineering complex agents. A complex agent is one that must arbitrate between potentially conflicting goals or behaviors. Behavior-oriented design builds on work in behavior-based and hybrid architectures for agents, and the object oriented approach to software engineering. The primary contributions of this dissertation are: 1.The BOD architecture: a modular architecture with each module providing specialized representations to facilitate learning. This includes one pre-specified module and representation for action selection or behavior arbitration. The specialized representation underlying BOD action selection is Parallel-rooted, Ordered, Slip-stack Hierarchical (POSH) reactive plans. 2.The BOD development process: an iterative process that alternately scales the agent's capabilities then optimizes the agent for simplicity, exploiting tradeoffs between the component representations. This ongoing process for controlling complexity not only provides bias for the behaving agent, but also facilitates its maintenance and extendibility. The secondary contributions of this dissertation include two implementations of POSH action selection, a procedure for identifying useful idioms in agent architectures and using them to distribute knowledge across agent paradigms, several examples of applying BOD idioms to established architectures, an analysis and comparison of the attributes and design trends of a large number of agent architectures, a comparison of biological (particularly mammalian) intelligence to artificial agent architectures, a novel model of primate transitive inference, and many other examples of BOD agents and BOD development.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.