Tense, Aspect and the Cognitive Representation of Time

This paper explores the relationships between a computation theory of temporal representation (as developed by James Allen) and a formal linguistic theory of tense (as developed by Norbert Hornstein) and aspect. It aims to provide explicit answers to four fundamental questions: (1) what is the computational justification for the primitive of a linguistic theory; (2) what is the computational explanation of the formal grammatical constraints; (3) what are the processing constraints imposed on the learnability and markedness of these theoretical constructs; and (4) what are the constraints that a linguistic theory imposes on representations. We show that one can effectively exploit the interface between the language faculty and the cognitive faculties by using linguistic constraints to determine restrictions on the cognitive representation and vice versa. Three main results are obtained: (1) We derive an explanation of an observed grammatical constraint on tense?? Linear Order Constraint??m the information monotonicity property of the constraint propagation algorithm of Allen's temporal system: (2) We formulate a principle of markedness for the basic tense structures based on the computational efficiency of the temporal representations; and (3) We show Allen's interval-based temporal system is not arbitrary, but it can be used to explain independently motivated linguistic constraints on tense and aspect interpretations. We also claim that the methodology of research developed in this study??oss-level" investigation of independently motivated formal grammatical theory and computational models??a powerful paradigm with which to attack representational problems in basic cognitive domains, e.g., space, time, causality, etc.

Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling

Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB.

Plasma polymerization of C[subscript 4]F[subscript 8] thin film on high aspect ratio silicon molds

High aspect ratio polymeric micro-patterns are ubiquitous in many fields ranging from sensors, actuators, optics, fluidics and medical. Second generation PDMS molds are replicated against first generation silicon molds created by deep reactive ion etching. In order to ensure successful demolding, the silicon molds are coated with a thin layer of C[subscript 4]F[subscript 8] plasma polymer to reduce the adhesion force. Peel force and demolding status are used to determine if delamination is successful. Response surface method is employed to provide insights on how changes in coil power, passivating time and gas flow conditions affect plasma polymerization of C[subscript 4]F[subscript 8].