Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods

Transient capacitance methods were applied to the depletion region of an abrupt asymmetric n(+) -p junction of silicon and unintentionally doped poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] (MEH-PPV). Studies in the temperature range 100-300 K show the presence of a majority-carrier trap at 1.0 eV and two minority traps at 0.7 and 1.3 eV, respectively. There is an indication for more levels for which the activation energy could not be determined. Furthermore, admittance data reveal a bulk activation energy for conduction of 0.12 eV, suggesting the presence of an additional shallow acceptor state. (C) 1999 American Institute of Physics. [S0003-6951(99)02308-6].

Determination of deep and shallow levels in conjugated polymers by electrical methods

Conjugated organic semiconductors have been submitted to various electrical measurement techniques in order to reveal information about shallow levels and deep traps in the forbidden gap. The materials consisted of poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] (MEH-PPV), poly(3-methylthiophene) (PMeT), and alpha-sexithienyl (alpha T6) and the employed techniques were IV, CV, admittance spectroscopy, TSC, capacitance and current transients. (C) 1999 Elsevier Science B.V. All rights reserved.

Electronic levels in MEH-PPV

pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states. (C) 2000 Published by Elsevier Science S.A. All rights reserved.