Comparative study of the dissipation of triadimefon in greenhouse and field conditions

The dissipation of triadimefon, {1-(4-chlorophenoxy)-3,3-dimethyl-1-(1H-1,2,4-triazol-1-yl)butanone}, was studied after its application to melon leaves, glass and paper, both in greenhouse and field conditions. The dissipation rate of triadimefon in its commercial formulation Bayleton 5 was found to be lower in greenhouse than field. The results for different samples in the same conditions show that the dissipation of triadimefon was found to be biphasic. This result can be accounted by a semi-empirical model which assumes an initial fast decline of the dissipation rate, attributed to an exponential decay of the volatilization rates, followed by a second phase where the dissipation is due to a first order degradation processes.The dissipation of triadimefon, {1-(4-chlorophenoxy)-3,3-dimethyl-1-(1H- 1,2,4-triazol-1-yl)butan-one}, was studied after its application to melon leaves, glass and paper, both in greenhouse and field conditions. The dissipation rate of triadimefon in its commercial formulation Bayleton 5 was found to be lower in greenhouse than field. The results for different samples in the same conditions show that the dissipation of triadimefon was found to be biphasic. This result can be accounted by a semi-empirical model which assumes an initial fast decline of the dissipation rate, attributed to an exponential decay of the volatilization rates, followed by a second phase where the dissipation is due to a first order degradation processes.

Electronic transport in field-effect transistors of sexithiophene

The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown. (C) 2004 American Institute of Physics.