5 resultados para IMPURITY

em University of Michigan


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A solution d-c arc method has been developed for the impurity analysis of americium solutions which are from 3-5 Molar in ammonium thiocyanate.

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"Contract no. AF 18(600) 1000. File no. 10-16. AFOSR-TR-57-11. ASTIA AD 120411. Cornell University, Department of Engineering Physics."

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The status of silicon sheet development for photovoltaic applications is critically reviewed. Silicon sheet growth processes are classified according to their linear growth rates. The "fast" growth processes, which include edge-defined film-fed growth, silicon on ceramic, dendritic-web growth, and ribbon-to-ribbon growth, are comparatively ranked subject to criteria involving growth stability, sheet productivity, impurity effects, crystallinity, and solar cell results. The status of more rapid silicon ribbon growth techniques, such as horizontal ribbon growth and melt quenching, is also reviewed. The emphasis of the discussions is on examining the viability of these sheet materials as solar cell substrates for low-cost silicon photovoltaic systems.

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A carrier distillation spectrochemical method has been successfully adapted to direct reading spectrometry. Direct reading techniques have been developed for the rapid analyses of aluminum in plutonium peroxide to demonstrate the capability of direct reading for process impurity control.

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A process has been developed for the removal of chromium, copper, iron, manganese, nickel, lead, tin, and zinc impurities from an acid aqueous solution of americium chloride using a mercury cathode cell operating at 5-10 amperes and 16-18 volts. The americium is not affected. The process may also be used to remove other impurity elements.