Interface state mapping in a Schottky barrier of the organic semiconductor terrylene


Autoria(s): Stallinga, Peter; Gomes, Henrique L.; Murgia, M.; Mullen, K.
Data(s)

26/06/2015

26/06/2015

2002

Resumo

In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum and the vacuum sublimed organic semiconductor terrylene. The density map of these interface states was extracted from the, admittance spectroscopy data. They revealed an interface state density of 2 x 10(12). cm(-2)eV(-1) close to the valence band which decreases slightly towards midgap. Additional do measurements show that the semiconductor bulk activation energy is 0.33 eV which may correspond to an acceptor level. (C) 2002 Elsevier Science B.V. All rights reserved.

Identificador

1566-1199

http://hdl.handle.net/10400.1/6640

https://dx.doi.org/10.1016/S1566-1199(02)00024-1

Idioma(s)

eng

Publicador

Elsevier

Relação

P-000-Q7N

Direitos

restrictedAccess

Tipo

article