Direct Observation of Tetragonal Distortion in Epitaxial Structures through Secondary Peak Split in a Synchrotron Radiation Renninger Scan


Autoria(s): de Menezes, Alan S.; dos Santos, Adenilson O.; Almeida, Juliana M. A.; Bortoleto, Jose R. R.; Cotta, Monica A.; Morelhao, Sergio L.; Cardoso, Lisandro P.
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

25/10/2016

20/05/2014

25/10/2016

01/08/2010

Resumo

This paper reports a direct observation of an interesting split of the (022)(022) four-beam secondary peak into two (022) and (022) three-beam peaks, in a synchrotron radiation Renninger scan (phi-scan), as an evidence of the layer tetragonal distortion in two InGaP/GaAs (001) epitaxial structures with different thicknesses. The thickness, composition, (a perpendicular to) perpendicular lattice parameter, and (01) in-plane lattice parameter of the two epitaxial ternary layers were obtained from rocking curves (omega-scan) as well as from the simulation of the (022)(022) split, and then, it allowed for the determination of the perpendicular and parallel (in-plane) strains. Furthermore, (022)(022) omega:phi mappings were measured in order to exhibit the multiple diffraction condition of this four-beam case with their split measurement.

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Identificador

Crystal Growth & Design. Washington: Amer Chemical Soc, v. 10, n. 8, p. 3436-3441, 2010.

1528-7483

http://hdl.handle.net/11449/223

http://acervodigital.unesp.br/handle/11449/223

10.1021/cg100146x

WOS:000280471700024

http://dx.doi.org/10.1021/cg100146x

Idioma(s)

eng

Publicador

Amer Chemical Soc

Relação

Crystal Growth & Design

Direitos

info:eu-repo/semantics/closedAccess

Tipo

outro