Ab initio calculations on twisted graphene/hBN: Electronic structure and STM image simulation
| Contribuinte(s) |
Correa, J.D., Departamento de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia Cisternas, E., Departamento de Ciencias Físicas, Universidad de la Frontera, Casilla 54 D, Temuco, Chile |
|---|---|
| Data(s) |
2016
27/07/2016
27/07/2016
|
| Identificador |
381098 http://hdl.handle.net/11407/2465 10.1016/j.ssc.2016.05.001 |
| Idioma(s) |
eng |
| Publicador |
Elsevier Ltd |
| Relação |
Solid State Communications Volume 241, 1 September 2016, Pages 1-6 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84971303998&partnerID=40&md5=77a5bd92e260480d52019549a78907e7 |
| Direitos |
info:eu-repo/semantics/restrictedAccess restrictedAccess |
| Fonte |
Scopus |
| Palavras-Chave | #Calculations #Density functional theory #Electronic properties #Electronic structure #Fermi level #Heterojunctions #Scanning tunneling microscopy #Van der Waals forces #Ab initio calculations #Density of state #Electronic properties of graphene #Stack configurations #STM images #Total density of state #Van Der Waals interactions #Van Hove singularities #Graphene |
| Tipo |
info:eu-repo/semantics/article Article |
