Differences between thin films deposition systems in the production transition metal nitride


Autoria(s): Quintero J.H.; Mariño A.; Arango P.J.
Contribuinte(s)

Materiales Nanoestructurados y Biomodelación, Universidad de Medellín, Medellín, Colombia

Laboratorio de Superconductividad y Nuevos Materiales, Universidad Nacional de Colombia, Bogotá, Colombia

Laboratorio de Física Del Plasma, Universidad Nacional de Colombia, Manizales, Colombia

Data(s)

2013

23/06/2016

23/06/2016

Identificador

17426588

http://hdl.handle.net/11407/2286

10.1088/1742-6596/466/1/012002

Idioma(s)

eng

Relação

Journal of Physics: Conference Series Volume 466, Issue 1, 2013, Article number 012002

http://iopscience.iop.org/article/10.1088/1742-6596/466/1/012002/meta

Direitos

info:eu-repo/semantics/restrictedAccess

restrictedAccess

Fonte

Scopus

Palavras-Chave #Direct observations #Gold nitride #Ionic implantation #Optimum properties #Production transition #Pulsed arc #Reactive ion #Thin films deposition #Binding energy #Coatings #Gold #Ion implantation #Nitrides #Physical vapor deposition #Thin films #Vacuum technology #Deposition
Tipo

info:eu-repo/semantics/conferenceObject

Conference Paper