A comparative study on surface morphology from the HgIsub(2) semiconductors prepared by different techniques


Autoria(s): Sao Paulo: ABEN, 2013
Cobertura

I

Data(s)

17/11/2014

18/11/2014

01/04/2015

17/11/2014

18/11/2014

01/04/2015

31/12/1969

Identificador

http://hdl.handle.net/123456789/17226

Publicador

Sao Paulo: ABEN, 2013

Direitos

openAccess

Fonte

HGI2 SEMICONDUCTOR DETECTORS

CRYSTAL GROWTH

IMPURITIES

MERCURY IODIDES

SURFACE

MORPHOLOGY

STOICHIOMETRY

DMSO

Palavras-Chave #BIOMASS #ABSORBENTS #CHEMISORPTION #WASTEWATER #MOLYBDENUM IONS #TRACE TECHNIQUES #GAMMA SPECTROSCOPY #HIGH-PURITY GE DETECTORS
Tipo

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