Anisotropic magnetoresistance in nanocontacts
Contribuinte(s) |
Universidad de Alicante. Departamento de Física Aplicada Grupo de Nanofísica |
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Data(s) |
21/11/2012
21/11/2012
10/04/2008
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Resumo |
We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In systems without localized states, such as chemically pure break junctions, large AMR only occurs if the orbital polarization of the current is large, regardless of the anisotropy of the density of states. In systems that display localized states close to the Fermi energy, such as a single electron transistor with ferromagnetic electrodes, large AMR is related to the variation of the Fermi energy as a function of the magnetization direction. We acknowledge Spanish MEC and Generalitat Valenciana for funding grants (MAT2007-65487), Ramon y Cajal Program (GV-ACCOMP07/054), and Consolider (CSD2007-0010). |
Identificador |
JACOB, David; FERNÁNDEZ-ROSSIER, J.; PALACIOS, J.J. “Anisotropic magnetoresistance in nanocontacts”. Physical Review B. Vol. 77, No. 16 (2008). ISSN 1098-0121, pp. 165412-1/6 1098-0121 (Print) 1550-235X (Online) http://hdl.handle.net/10045/25231 10.1103/PhysRevB.77.165412 |
Idioma(s) |
eng |
Publicador |
American Physical Society |
Relação |
http://dx.doi.org/10.1103/PhysRevB.77.165412 |
Direitos |
© 2008 The American Physical Society info:eu-repo/semantics/openAccess |
Palavras-Chave | #Ab initio #Anisotropic magnetoresistance #Ni nanocontacts #Física de la Materia Condensada |
Tipo |
info:eu-repo/semantics/article |