Deep level analysis of homoepitaxial ZnO doped with N
| Data(s) |
2014
|
|---|---|
| Resumo |
High intrinsic carrier concentration (n-type) • Efforts to reduce this effect: • Homoepitaxy1 • Non-polar orientations • Similar samples exhibit residual doping as low as ~1014 cm-3 (2) The path to p-type doping • Many dopants proposed • N is a promising candidate • Simple NO is a deep level • Complex levels have shallower energies • N-related levels observed near the VB by many groups • Energies between 130 meV and 160 meV from VBM |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Relação |
http://oa.upm.es/36804/1/INVE_MEM_2014_194731.pdf |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
2014 MRS Fall Meeting & Exhibit | 2014 MRS Fall Meeting & Exhibit | 30/11/2014 - 05/12/2014 | Boston, Massachusetts, EE.UU |
| Palavras-Chave | #Física #Telecomunicaciones |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
