High Intensity Low Temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs
Data(s) |
2014
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Resumo |
In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to -190 degrees C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V-oc starting from -20 degrees C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-p Ge heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/35792/1/INVE_MEM_2014_190188.pdf http://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.4897021 info:eu-repo/semantics/altIdentifier/doi/null |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
AIP Conference Proceedings | 10th International Conference on Concentrator Photovoltaic Systems: CPV-10 | 07/04/2014 - 09/04/2014 | Albuquerque, New Mexico, USA |
Palavras-Chave | #Electrónica #Telecomunicaciones |
Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |