Raman spectroscopy in Group IV nanowires and nanowire axial heterostructures
| Data(s) |
2014
|
|---|---|
| Resumo |
The control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/29722/1/INVE_MEM_2013_169439.pdf http://dx.doi.org/10.1557/opl.2014.197 info:eu-repo/semantics/altIdentifier/doi/10.1557/opl.2014.197 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
MRS Proceedings | Symposium SS/XX – Micro- and Nanoscale Systems – Novel Materials, Structures and Devices | 01/12/2013 - 06/06/2014 | Boston, Massachusets |
| Palavras-Chave | #Física #Telecomunicaciones |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
