Electronic property analysis of O-doped Cu3SbS3
Data(s) |
01/09/2012
|
---|---|
Resumo |
The ternary Cu-Sb-S semiconductors are considered to be sustainable and potential alternative absorber materials in thin film photovoltaic applications. In these compounds, several phases may coexist, albeit in different proportions depending on experimental growth conditions. Additionally, the photovoltaic efficiency could be increased with isoelectronic doping. In this work we analyze the electronic properties of O-doped Cu3SbS3 in two structures: the wittichenite and the skinnerite. We use first-principles within the density functional formalism with two different exchange-correlation potentials. In addition, we estimate the potential of these compounds for photovoltaic applications. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/16128/1/INVE_MEM_2012_132309.pdf http://www.sciencedirect.com/science/article/pii/S0927024812002383 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.solmat.2012.05.013 |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 2012-09, Vol. 104 |
Palavras-Chave | #Telecomunicaciones #Electrónica |
Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |