Capacitive load based on IGBTs for on-site characterization of PV arrays
| Data(s) |
01/11/2006
|
|---|---|
| Resumo |
This paper describes the practical design of a portable capacitive load based on insulated gate bipolar transistors (IGBTs), which is used to measure the I–V characteristics of PV arrays with short-circuit currents up to 80 A and open circuit voltages up to 800 V. Such measurement allows on-site characterization of PV arrays under real operating conditions and also provides information for the detection of potential array anomalies, such as broken cells or defective connections. The presented I–V load is easy to reproduce and low-cost, characteristics that are within the reach of small-scale organizations involved in PV electrification projects. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.U.I.T. Industrial (UPM) |
| Relação |
http://oa.upm.es/13945/1/INVE_MEM_2006_119363.pdf http://www.sciencedirect.com/science/article/pii/S0038092X06000065 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.solener.2005.09.013. |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Solar Energy, ISSN 0038-092X, 2006-11, Vol. 80, No. 11 |
| Palavras-Chave | #Telecomunicaciones #Energías Renovables #Química |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
